Frederick Mancoff is a Distinguished Member of Technical Staff at Everspin Technologies, a company that develops magnetoresistive RAM (MRAM)—a nonvolatile memory technology that combines the speed of SRAM with the persistence of flash memory. Mancoff earned both his undergraduate and graduate degrees from Stanford University, completing his Ph.D. in materials science and engineering in 1995. His doctoral research examined the materials properties of NiMnSb and PtMnSb thin films for half-metallic spin-transport applications—compounds predicted to carry current with fully spin-polarized electrons, making them of fundamental interest for spintronic devices. This expertise in magnetic thin films and spin transport proved foundational for his subsequent career in the MRAM industry, where controlling spin-polarized currents is essential.
EDUCATION
Graduate Studies
Stanford University
Materials Engineering, Materials Science
Graduate Thesis
Materials Properties of NIMNSB and PTMNSB Thin Films for Half-Metallic Spin-Transport Applications
Undergraduate Studies
Stanford University
SELECTED AWARDS
1995, LeRoy Apker Award, American Physical Society
IMPACT STORY
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