James Adkisson is a Lead Technologist for Silicon Germanium (SiGe) HBT Power Amplifier technology at GlobalFoundries, a leading semiconductor foundry. Adkisson earned his undergraduate degree before completing his Ph.D. in electrical engineering at Stanford University, where his fellowship began in 1985. His expertise in heterojunction bipolar transistors and radio-frequency semiconductor devices has been central to the development of the high-performance analog components used in wireless communications systems.
James Adkisson
1985 HERTZ FELLOW
MAKING HISTORY
EDUCATION
Graduate Studies
Stanford University
Electrical Engineering
Graduate Thesis
Monolithic Integration of Gallium Arsenide on Silicon and Silicon Devices for Optoelectronic Applications
IMPACT STORY
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